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ST 2SC3195
NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application VHF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE Ptot Tj TS Value 40 30 4 20 -20 100 125 -55 to +125 Unit V V V mA mA mW
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002
ST 2SC3195
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=4V Transition Frequency at VCE=6V, IC=1mA Reverse Transfer Capacitance at VCE=6V, f=1MHz Collector Base Time Constant at VCE=6V, IE=-1mA, f=30MHz Noise Figure at VCC=6V, f=100MHz, IE=-1mA Power Gain at VCC=6V, f=100MHz, IE=-1mA Gpe 18 dB NF 2.5 5 dB Cc,rbb' 20 ps Cre 0.7 pF fT 550 MHz IEBO 0.5 A ICBO 0.5 A hFE hFE hFE 40 70 100 80 140 200 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002

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